We demonstrate the versatility of stencilassisted reactive ion etching is lowcost and parallel process for the replication of micrometric and nanometric patterns in any organic material.

Without any further lithographic procedures, structures in the regime of 100nm and below can be directly prepared by vapour deposition while partly shadowing the substrate with free standing stencil mask, here an Si3N4 membrane with an array of small holes. Viallet, J. Secondly, the fabrication step has been integrated in liftoff process of metal or molecular selfassembled monolayers. Musil, Due to shift of the mask is precisely controlled.

Grisolia, Khler, Van Den Boogaart, J. Purchase PDF 1355 KDirect growth of nanostructures by deposition through an Si3N4 shadow maskPhysica E Lowdimensional Systems and Nanostructures,Volume 4, Issue 3,July Pages 196200J. reduction in size was achieved by applying mask with reduced hole diameters ranging up to 300nm. We demonstrate the versatility of stencilassisted reactive ion etching though examples. They have the shape of truncated cones with bottom diameter of about 550nm.

An ebeam evaporator is used for fabrication with Si3N4coated Si stencil mask cantilever. This lithography process allows the patterning of organic material non sensitive to electronic or optical radiations, sensitive to solvents, or already patterned which cannot be patterned by conventional lithography methods. The mask can be positioned with nanometer precision over range of m m. Musil, The system has three ultrahigh vacuum UHV chambers with vibration dampers to reduce mechanical noise and ion pumps for use during fabrication and imaging. Due to shift of the mask is precisely controlled.

Due to shift of the mask is precisely controlled. Purchase PDF 1355 KDirect growth of nanostructures by deposition through an Si3N4 shadow maskPhysica E Lowdimensional Systems and Nanostructures,Volume 4, Issue 3,July Pages 196200J. reduction in size was achieved by applying mask with reduced hole diameters ranging up to 300nm.

small gap between the mask and the substrate to be prepared independently in situ different materials to be incorporated by multiple evaporation sources and custommade holes or patterns to be created in the stencil mask. With such mask very uniform dots of chromium have been grown on germanium substrates. They have the shape of truncated cones with bottom diameter of about 550nm. Khler, reduction in size was achieved by applying mask with reduced hole diameters ranging up to 300nm. Brugger, Secondly, the fabrication step has been integrated in liftoff process of metal or molecular selfassembled monolayers.

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