The nanoelectronic modeling tool NEMO3D is designed to provide quantitative estimates of QDbound electron and hole states by treating the system on the atomistic level. Already Purchased This Article? Select the Purchase History link to access the Full Text PDF. Nanotechnology, Guests Search and access Abstract records free of charge Register for table of contents alerts Purchase Full Text PDF Full Text HTML Access this document Buy this document Learn more about purchasing articles and standardsArticle Information Building and deploying community nanotechnology software tools on nanoHUB.

Please complete the online Technical Support Form if you need to log in. The resulting longrange strain field strongly modifies the energy diagram of the system, and has to be accounted for in realistic simulations of QD electronic properties. Guests Search and access Abstract records free of charge Register for table of contents alerts Purchase Full Text PDF documents Learn more about subscription options or how to become an IEEE Member.

Guests Search and access Abstract records free of charge Register for table of contents alerts Purchase Full Text PDF documents Learn more about subscription options or how to become an IEEE Member. Digital Object Identifier The growth of selfassembled semiconductor quantum dots QDs is driven by strain, induced by the mismatch of the lattice constants of the QD material in this work, InAs and that of the barrier material GaAs. In this paper, systematic study of the strain calculated within domain consisting of up to million atoms is presented.

Nanotechnology, Guests Search and access Abstract records free of charge Register for table of contents alerts Purchase Full Text PDF Full Text HTML Access this document Buy this document Learn more about purchasing articles and standardsArticle Information Building and deploying community nanotechnology software tools on nanoHUB. org atomistic simulations of multimillionatom quantum dot nanostructures Klimeck, G. Korkusinski, M. Haiying Xu Seungwon Lee Goasguen, S. Saied, The resulting longrange strain field strongly modifies the energy diagram of the system, and has to be accounted for in realistic simulations of QD electronic properties.

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